MT47H128M16RT-25E:C Detailed explanation of pin function specifications and circuit principle instructions

The part number "MT47H128M16RT-25E:C" refers to a DRAM (Dynamic Random Access Memory ) module from Micron Technology. Specifically, it is a 1.28Gb (128M x 16) DDR2 SDRAM, designed for high-performance applications.

Package and Pinout Description

This specific part typically comes in a FBGA (Fine-pitch Ball Grid Array) package. The number of pins can vary based on the specific configuration, but for this part, it is common to have around 84 pins or more, depending on the detailed version of the component.

For a complete and thorough analysis of the pinout, it would typically require access to the datasheet for the exact part, where you can find the detailed function for each pin. As you’ve requested a full explanation for each pin, including FAQ-style responses for common questions, I will summarize the most common functions that are relevant in such a part.

However, a full breakdown of 200 pins or more would require the exact datasheet for a detailed explanation, which you could obtain directly from the Micron website or relevant datasheet databases.

Below is a simplified list and FAQ style breakdown to help you understand the general layout and important details for this part.

Example Pinout Structure and Function List (84-pin Package)

Pin Function Description 1 VDD Power supply for core circuit 2 VSS Ground reference for the chip 3 DQ0 Data bit 0, part of data bus 4 DQ1 Data bit 1, part of data bus 5 DQ2 Data bit 2, part of data bus 6 DQ3 Data bit 3, part of data bus 7 DQ4 Data bit 4, part of data bus 8 DQ5 Data bit 5, part of data bus 9 DQ6 Data bit 6, part of data bus 10 DQ7 Data bit 7, part of data bus 11 DQ8 Data bit 8, part of data bus 12 DQ9 Data bit 9, part of data bus 13 DQ10 Data bit 10, part of data bus 14 DQ11 Data bit 11, part of data bus 15 DQ12 Data bit 12, part of data bus 16 DQ13 Data bit 13, part of data bus 17 DQ14 Data bit 14, part of data bus 18 DQ15 Data bit 15, part of data bus 19 WE Write enable for data writes 20 CAS Column address strobe 21 RAS Row address strobe 22 CS Chip select 23 CKE Clock enable for refreshing and other operations 24 ODT On-die termination for data integrity 25 VDDQ Power supply for input/output buffers 26 VSSQ Ground for input/output buffers 27 NC No connection pin … … …

FAQ for MT47H128M16RT-25E:C

Q1: What is the function of the pin marked "VDD"? A1: The "VDD" pin is the power supply for the core logic of the DRAM chip, ensuring that it has the necessary power to function.

Q2: What does the "DQ" series of pins represent? A2: The "DQ" pins represent the data bits (DQ0 to DQ15), which are part of the data bus. These pins carry the data that is being read from or written to the memory.

Q3: What is the role of the "RAS" pin? A3: The "RAS" (Row Address Strobe) pin is used to latch the row address in the DRAM memory during memory access.

Q4: What does the "CAS" pin do? A4: The "CAS" (Column Address Strobe) pin is used to latch the column address in the DRAM memory.

Q5: What is the purpose of the "WE" pin? A5: The "WE" (Write Enable) pin is used to enable writing data to the memory during a write operation.

Q6: Can I use "NC" pins for anything? A6: No, the "NC" (No Connect) pins are not connected to any internal circuit, so they serve no functional purpose in the circuit.

Q7: What is the significance of the "CS" pin? A7: The "CS" (Chip Select) pin is used to enable or disable the chip. When the "CS" pin is active, the chip is selected for communication.

Q8: How do the "VSS" and "VSSQ" pins function? A8: The "VSS" and "VSSQ" pins are ground pins that provide a reference voltage for the core and input/output buffers, respectively.

Q9: What does the "CKE" pin do? A9: The "CKE" (Clock Enable) pin enables or disables the clock to the memory, allowing or preventing further operations.

Q10: How is the "ODT" pin used? A10: The "ODT" (On-Die Termination) pin controls the on-die termination resistance, helping to maintain signal integrity for high-speed data transfers.

Q11: Can I connect "VDDQ" and "VDD" together? A11: No, "VDD" and "VDDQ" serve different purposes. "VDD" powers the core circuitry, while "VDDQ" powers the I/O buffers. They should be kept separate.

Q12: What voltage should be supplied to the "VDD" and "VSS" pins? A12: The "VDD" pin typically requires 1.8V, while "VSS" is connected to the ground (0V).

Q13: What happens if the "CAS" or "RAS" is not properly timed? A13: Incorrect timing of "CAS" or "RAS" can lead to incorrect memory reads or writes, causing data corruption.

Q14: How do I ensure data integrity in high-speed memory? A14: Proper use of the "ODT" pin and the termination resistors can help maintain data integrity during high-speed operations.

Q15: What is the effect of a low "CS" signal? A15: A low "CS" signal selects the chip for communication. If the "CS" is high, the chip is deselected, and no operations are allowed.

Q16: What should I do if my device is not responding to commands? A16: Check the "VDD" and "VSS" connections, ensure the "CS" pin is low, and verify the timing of the control signals.

Q17: Can I use this chip for both reading and writing operations? A17: Yes, the MT47H128M16RT-25E:C supports both read and write operations, controlled by the "WE", "CAS", and "RAS" pins.

Q18: Are there specific conditions for initializing the memory? A18: Yes, initializing the memory requires sending specific commands on the control pins in a defined sequence, as per the chip's timing specifications.

Q19: How does the memory handle refreshing? A19: Refreshing is controlled by the "RAS" and "CAS" pins, as the DRAM requires periodic refresh cycles to maintain data integrity.

Q20: What are the maximum operating frequencies for this memory module? A20: This memory operates at a maximum frequency specified by the data rate of the DDR2 interface , typically around 800 Mbps.

Please note that this is a simplified overview. For exact specifications and full pinout details, the datasheet from Micron Technology for this specific part number will provide a more accurate, complete breakdown of pin functions and electrical characteristics.