IRLR024NTRPBF Detailed explanation of pin function specifications and circuit principle instructions

The model "IRLR024NTRPBF" is a part of the IR (International Rectifier) family, specifically a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in a N-channel configuration. The part number "IRLR024NTRPBF" refers to a logic-level MOSFET suitable for use in low-voltage applications, offering fast switching and low on-resistance. It is designed for use in a variety of power management applications, including switching regulators, motor drivers, and load switches.

Package Type:

The IRLR024NTRPBF is packaged in a TO-220 package, which is a widely used package for power devices. The TO-220 package typically has three leads (pins).

Here’s a detailed explanation of each pin’s function:

Pinout Description (TO-220 Package):

Pin 1 (Gate): This is the gate of the MOSFET. The gate controls the switching of the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on (allowing current to flow from Drain to Source). When the gate voltage is lower than the threshold voltage (V_GS(th)), the MOSFET is off, and no current flows. The gate is isolated from the rest of the MOSFET with an insulating oxide layer, which makes it electrically isolated.

Pin 2 (Drain): The drain is the terminal through which the current flows out of the MOSFET when it is conducting. In a typical application, the drain is connected to the load.

Pin 3 (Source): The source is the terminal through which current enters the MOSFET. When the MOSFET is conducting, current flows from the source to the drain.

Pin Function Table (IRLR024NTRPBF, TO-220 Package):

Pin Number Pin Name Description 1 Gate Controls the on/off state of the MOSFET, high voltage turns it on. 2 Drain Current flows out from the MOSFET when it is on, connected to the load. 3 Source Current enters the MOSFET, typically connected to ground or low voltage.

Circuit Principle (Overview):

The IRLR024NTRPBF is used in various switching applications where control over high currents and voltages is required. The MOSFET works as a switch; when a voltage is applied to the gate, it creates an electric field that allows current to flow between the drain and source. The MOSFET is efficient for switching power, as it has low on-resistance, reducing power loss during operation.

Basic Operation:

Gate Voltage (VGS): If the gate voltage exceeds the threshold (VGS(th)), the MOSFET will turn on and allow current to flow between the drain and source. Drain-Source Voltage (V_DS): This is the voltage difference between the drain and source. When the MOSFET is on, it provides a low-resistance path for current. Gate Drive: The gate should be driven with a voltage high enough to ensure the MOSFET operates in the linear or saturation region for switching applications.

FAQ (Frequently Asked Questions):

Q1: What is the gate threshold voltage (V_GS(th)) of the IRLR024NTRPBF MOSFET?

A1: The gate threshold voltage (V_GS(th)) for the IRLR024NTRPBF is typically between 1.0V and 3.0V, meaning it turns on when the gate-to-source voltage is within this range.

Q2: What is the maximum drain-to-source voltage (V_DS) for the IRLR024NTRPBF?

A2: The IRLR024NTRPBF can handle a maximum V_DS of 30V, meaning the voltage between the drain and source should not exceed 30V.

Q3: What is the maximum continuous drain current for the IRLR024NTRPBF?

A3: The maximum continuous drain current is 30A, which depends on the operating temperature and thermal management of the system.

Q4: Can the IRLR024NTRPBF be used for high-frequency switching applications?

A4: Yes, the IRLR024NTRPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching performance.

Q5: What is the R_DS(on) for the IRLR024NTRPBF?

A5: The typical R_DS(on) is 0.005Ω, which means the MOSFET offers low resistance when conducting, minimizing power loss.

Q6: How does the IRLR024NTRPBF perform in low-voltage applications?

A6: The IRLR024NTRPBF is designed for low-voltage applications due to its logic-level gate drive, making it compatible with 5V logic signals for efficient switching.

Q7: What are the thermal limitations of the IRLR024NTRPBF?

A7: The IRLR024NTRPBF has a maximum junction temperature of 150°C. Proper heat sinking is recommended to keep the MOSFET within safe temperature limits during operation.

Q8: Can the IRLR024NTRPBF be used in motor driver circuits?

A8: Yes, the IRLR024NTRPBF is suitable for motor driver circuits as it can handle high currents with low switching losses, making it efficient for controlling motors.

Q9: What is the typical gate charge (Qg) of the IRLR024NTRPBF?

A9: The typical gate charge (Qg) of the IRLR024NTRPBF is around 25nC, which ensures fast switching times and low power consumption for driving the gate.

Q10: What is the source-to-drain diode used for in the IRLR024NTRPBF?

A10: The source-to-drain diode is used for flyback protection in inductive load switching. It protects the MOSFET from high-voltage spikes caused by inductive kickback.

Q11: Is the IRLR024NTRPBF a P-channel or N-channel MOSFET?

A11: The IRLR024NTRPBF is an N-channel MOSFET, meaning current flows from the drain to the source when the MOSFET is turned on.

Q12: What is the maximum gate-source voltage (V_GS) for the IRLR024NTRPBF?

A12: The maximum V_GS for the IRLR024NTRPBF is ±20V. Applying a voltage higher than this can damage the gate oxide and permanently degrade the device.

Q13: Can the IRLR024NTRPBF be used in power supply designs?

A13: Yes, the IRLR024NTRPBF is commonly used in power supply designs such as switching regulators and DC-DC converters, where efficient switching is needed.

Q14: What is the switching speed of the IRLR024NTRPBF?

A14: The IRLR024NTRPBF has a fast switching speed due to its low gate charge and low R_DS(on), making it ideal for high-speed switching applications.

Q15: What is the gate capacitance (C_g) of the IRLR024NTRPBF?

A15: The typical gate capacitance (C_g) is 450pF, which affects the switching performance and the drive requirements.

Q16: What is the maximum power dissipation of the IRLR024NTRPBF?

A16: The maximum power dissipation of the IRLR024NTRPBF is 150W when properly heat-sinked, depending on the operating conditions and ambient temperature.

Q17: Is there a recommended gate drive voltage for the IRLR024NTRPBF?

A17: A recommended gate drive voltage is 10V, which ensures the MOSFET operates efficiently in the saturation region.

Q18: Can the IRLR024NTRPBF be used for load-switching applications?

A18: Yes, the IRLR024NTRPBF is commonly used for load-switching applications where fast switching and low on-resistance are required.

Q19: What are the common applications of the IRLR024NTRPBF?

A19: The IRLR024NTRPBF is used in various applications, including power supplies, motor drivers, switching regulators, and load switches.

Q20: How should the IRLR024NTRPBF be mounted on a PCB?

A20: The IRLR024NTRPBF should be mounted with proper thermal management, using a heatsink if necessary, and ensuring good soldering to ensure electrical and thermal performance.

This is a detailed explanation of the IRLR024NTRPBF including its pin functions, circuit principles, and 20 FAQ. If you need further clarification on any point, feel free to ask!